Featured paper in IET

Dr Kevin Huang, Senior Research Fellow at the University of Southampton’s ORC has had his group’s paper, "CVD-grown Ge-Sb-Te thin-film device" as the feature letter in the IET’s Electronics Letters. This popular and respected forum publishes the very latest results and ideas in advancement of electronic and electrical engineering technology.

The paper describes research and prototype testing conducted under the supervision of Professor Dan Hewak on a new CVD (Chemical Vapour Deposition) grown Ge-Sb-Te thin-film phase-change memory device. CVD-grown thin-film technology is attracting considerable interest as a prime candidate for the next generation of nonvolatile devices to meet future data storage needs. It uses unique chemistry developed by Dr Huang to deposit high-purity, highperformance solid materials in production of thin-film PCRAM (Phase-Change Random Access Memory) devices. These provide higher density storage and operation speed over existing flash technology; critical to meeting the continually growing demand for rewritable storage.

The research, funded by the Engineering and Physical Sciences Research Council through the EPSRC Centre for Innovative Manufacturing in Photonics, continues to show promising results for CVDgrown materials for both thin-film and optical fibre applications .

Acknowledgements go to authors of the paper: Professor D Hewak, B Gholipour, J Y Ou and K Knight.